Integrated circuit having memory cell array, and method of manufacturing same

ABSTRACT

An integrated circuit device (e.g., a logic device or a memory device) having (i) a memory cell array which includes a plurality of memory cells (for example, memory cells having electrically floating body transistors) arranged in a matrix of rows and columns, wherein each memory cell includes at least one transistor having a gate, gate dielectric and first, second and body regions, wherein: (i) the gate and gate dielectric are disposed on or above the first semiconductor layer that is disposed on or above an insulating layer or region, (ii) the body region of each transistor is electrically floating, (iii) the transistors of adjacent memory cells include a layout that provides a common first region, and (iv) the first regions of the transistors are comprised of a semiconductor material which is different from the material of the first semiconductor layer. Also disclosed are inventive methods of manufacturing, for example, such integrated circuit devices.

RELATED APPLICATION

This application claims priority to U.S. Provisional Application Ser. No. 61/007,103, entitled “Integrated Circuit Having Memory Cell Array, and Method of Manufacturing Same”, filed Dec. 11, 2007; the contents of this provisional application are incorporated by reference herein in their entirety.

INTRODUCTION

The present inventions relate to a memory cell, array, architecture and device, and techniques for reading, controlling and/or operating such cell and device; and more particularly, in one aspect, to a semiconductor dynamic random access memory (“DRAM”) cell, array, architecture and/or device wherein the memory cell includes a transistor having an electrically floating body in which an electrical charge is stored.

There is a continuing trend to employ and/or fabricate advanced integrated circuits using techniques, materials and devices that improve performance, reduce leakage current and enhance overall scaling. Semiconductor-on-Insulator (SOI) is a material in which such devices may be fabricated or disposed on or in (hereinafter collectively “on”). Such devices are known as SOI devices and include, for example, partially depleted (PD), fully depleted (FD) devices, multiple gate devices (for example, double or triple gate), and Fin-FET.

One type of dynamic random access memory cell is based on, among other things, the electrically floating body effect of SOI transistors. (See, for example, U.S. Pat. No. 6,969,662, incorporated herein by reference). In this regard, the dynamic random access memory cell may consist of a PD or a FD SOI transistor (or transistor formed in bulk material/substrate) having a channel, which is interposed between the body and the gate dielectric. The body region of the transistor is electrically floating in view of the insulation layer (or non-conductive region, for example, in a bulk-type material/substrate) disposed beneath the body region. The state of memory cell is determined by the concentration of charge within the body region of the SOI transistor.

With reference to FIGS. 1A, 1B and 1C, in one embodiment, semiconductor DRAM array 10 includes a plurality of memory cells 12 each consisting of transistor 14 having gate 16, body region 18, which is electrically floating, source region 20 and drain region 22. The body region 18 is disposed between source region 20 and drain region 22. Moreover, body region 18 is disposed on or above region 24, which may be an insulation region (for example, in an SOI material/substrate) or non-conductive region (for example, in a bulk-type material/substrate). The insulation or non-conductive region 24 may be disposed on substrate 26.

The source and drain regions are formed in semiconductor layer 25 (for example, silicon-germanium, gallium arsenide, silicon carbide or monocrystalline silicon) using conventional and/or unconventional semiconductor processing techniques (for example, doping, implantation and annealing techniques). The dopant ions (p-type or n-type such as boron, phosphorus or arsenic) are implanted in semiconductor layer 25. In this way, the conductivity of semiconductor layer 25 which is exposed to the implantation (and thereafter via annealing) is different from the conductivity of the portion of the semiconductor layer 25 not exposed (for example, body region 18 disposed beneath gates 16).

Notably, annealing may be employed to form a lightly doped region of the source/drain regions after ion implantation. Thus, transistor 14 a includes gate 16 and gate dielectric 16 a, which is disposed between gate 16 and body region 18 of transistor 14. The body, source and drain regions (18, 20 and 22, respectively) may be fabricated and/or formed in a semiconductor layer (for example, a monocrystalline material such as silicon) using conventional and/or unconventional semiconductor processing techniques (for example, lithographic, doping and implantation techniques). Indeed, gate 16 and gate dielectric 16 a may also be fabricated and/or formed using conventional and/or unconventional processing techniques.

Data is written into or read from a selected memory cell by applying suitable control signals to a selected word line(s) 28, a selected source line(s) 30 and/or a selected bit line(s) 32. In response, charge carriers are accumulated in or emitted and/or ejected from electrically floating body region 18 wherein the data states are defined by the amount of carriers within electrically floating body region 18. Notably, the entire contents of the '662 Patent, including, for example, the features, attributes, architectures, configurations, materials, techniques and advantages described and illustrated therein, are incorporated by reference herein.

As mentioned above, memory cell 12 of DRAM array 10 operates by accumulating in or emitting/ejecting majority carriers (electrons or holes) 34 from body region 18 of, for example, N-channel transistors. (See, FIGS. 2A and 2B). In this regard, accumulating majority carriers (in this example, “holes”) 34 in body region 18 of memory cells 12 via, for example, impact ionization near source region 20 and/or drain region 22, is representative of a logic high or “1” data state. (See, FIG. 2A). Emitting or ejecting majority carriers 34 from body region 18 via, for example, forward biasing the source/body junction and/or the drain/body junction, is representative of a logic low or “0” data state. (See, FIG. 2B).

Notably, for at least the purposes of this discussion, a logic high or State “1” corresponds to an increased concentration of majority carriers in the body region relative to an unprogrammed device and/or a device that is programmed with a logic low or State “0”. In contrast, a logic low or State “0” corresponds to a reduced concentration of majority carriers in the body region relative to an unprogrammed device and/or a device that is programmed with logic high or State “1”.

Conventional reading is performed by applying a small drain bias and a gate bias above the transistor threshold voltage. The sensed drain current is determined by the charge stored in the floating body giving a possibility to distinguish between the states “1” and “0”. A floating body memory device has two different current states corresponding to the two different logical states: “1” and “0”.

In one conventional technique, the memory cell is read by applying a small bias to the drain of the transistor as well as a gate bias which is above the threshold voltage of the transistor. In this regard, in the context of memory cells employing N-type transistors, a positive voltage is applied to one or more word lines 28 to enable the reading of the memory cells associated with such word lines. The amount of drain current is determined/affected by the charge stored in the electrically floating body region of the transistor. As such, conventional reading techniques sense the amount of the channel current provided/generated in response to the application of a predetermined voltage on the gate of the transistor of the memory cell to determine the state of the memory cell; a floating body memory cell may have two or more different current states corresponding to two or more different logical states (for example, two different current conditions/states corresponding to the two different logical states: “1” and “0”).

In short, conventional writing programming techniques for memory cells having an N-channel type transistor often provide an excess of majority carriers by channel impact ionization (see, FIG. 3A) or by band-to-band tunneling (gate-induced drain leakage “GIDL”) (see, FIG. 3B). The majority carriers may be removed via drain side hole removal (see, FIG. 4A), source side hole removal (see, FIG. 4B), or drain and source hole removal, for example, using the back gate pulsing (see, FIG. 4C).

Further, FIG. 5 illustrates the conventional reading technique. In one embodiment, the state of the memory cell may be determined by sensing the amount of the channel current provided/generated in response to the application of a predetermined voltage on the gate of the transistor of the memory cell.

The memory cell 12 having electrically floating body transistor 14 may be programmed/read using other techniques including techniques that may, for example, provide lower power consumption relative to conventional techniques. For example, memory cell 12 may be programmed, read and/or controlled using the techniques and circuitry described and illustrated in Okhonin et al., U.S. Patent Application Publication No. 200710058427 (“Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same”, U.S. Non-Provisional patent application Ser. No. 11/509,188, filed on Aug. 24, 2006 (hereinafter “the '188 Application”)), which is incorporated by reference herein. In one aspect, the '188 Application is directed to programming, reading and/or control methods which allow low power memory programming and provide larger memory programming window (both relative to at least the conventional programming techniques).

With reference to FIG. 6, in one embodiment, the '188 Application employs memory cell 12 having electrically floating body transistor 14. The electrically floating body transistor 14, in addition to the MOS transistor, includes an intrinsic bipolar transistor (including, under certain circumstances, a significant intrinsic bipolar current). In this illustrative exemplary embodiment, electrically floating body transistor 14 is an N-channel device. As such, majority carriers are “holes”.

With reference to FIG. 7, in one embodiment, the '188 Application employs, writes or programs a logic “1” or logic high using control signals (having predetermined voltages, for example, Vg=0V, Vs=3V, and Vd=0V) which are applied to gate 16, source region 20 and drain region 22 (respectively) of transistor 14 of memory cell 12. Such control signals induce or cause impact ionization and/or the avalanche multiplication phenomenon. (See, FIG. 7). The predetermined voltages of the control signals, in contrast to the conventional method program or write logic “1” in the transistor of the memory cell via impact ionization and/or avalanche multiplication in the electrically floating body. In one embodiment, it is preferred that the bipolar transistor current responsible for impact ionization and/or avalanche multiplication in the floating body is initiated and/or induced by a control pulse which is applied to gate 16. Such a pulse may induce the channel impact ionization which increases the floating body potential and turns on the bipolar current. An advantage of the described method is that larger amount of the excess majority carriers is generated relative to other techniques.

Further, with reference to FIG. 8, when writing or programming logic “0” in transistor 14 of memory cell 12, in one embodiment of the '188 Application, the control signals (having predetermined voltages (for example, Vg=0.5V, Vs=3V and Vd=0.5V) are different and, in at least one embodiment, higher than a holding voltage (if applicable)) are applied to gate 16, source region 20 and drain region 22 (respectively) of transistor 14 of memory cell 12. Such control signals induce or provide removal of majority carriers from the electrically floating body of transistor 14. In one embodiment, the majority carriers are removed, eliminated or ejected from body region 18 through source region 20 and drain region 22. (See, FIG. 8). In this embodiment, writing or programming memory cell 12 with logic “0” may again consume lower power relative to conventional techniques.

When memory cell 12 is implemented in a memory cell array configuration, it may be advantageous to implement a “holding” operation for certain memory cells 12 when programming one or more other memory cells 12 of the memory cell array to enhance the data retention characteristics of such certain memory cells 12. The transistor 14 of memory cell 12 may be placed in a “holding” state via application of control signals (having predetermined voltages) that are applied to gate 16 and source region 20 and drain region 22 of transistor 14 of memory cell 12. In combination, such control signals provide, cause and/or induce majority carrier accumulation in an area that is close to the interface between gate dielectric 16 a and electrically floating body region 18. (See, FIG. 9). In this embodiment, it may be preferable to apply a negative voltage to gate 16 where transistor 14 is an N-channel type transistor.

With reference to FIG. 10, in one embodiment of the '188 Application, the data state of memory cell 12 may be read and/or determined by applying control signals (having predetermined voltages, for example, Vg=−0.5V, Vs=3V and Vd=0V) to gate 16 and source region 20 and drain region 22 of transistor 14. Such signals, in combination, induce and/or cause the bipolar transistor current in those memory cells 12 storing a logic state “1”. For those memory cells that are programmed to a logic state “0”, such control signals do not induce and/or cause a considerable, substantial or sufficiently measurable bipolar transistor current in the cells programmed to “0” state. (See, the '188 Application, which, as noted above, is incorporated by reference).

The reading may be performed using positive or negative voltages applied to word lines 28. As such, transistors 14 of device 10 are periodically pulsed between a positive gate bias, which (1) drives majority carriers (holes for N-channel transistors) away from the interface between gate insulator 32 and body region 18 of transistor 14 and (2) causes minority carriers (electrons for N-channel transistors) to flow from source region 20 and drain region 22 into a channel formed below gate 16, and the negative gate bias, which causes majority carriers (holes for N-channel transistors) to accumulate in or near the interface between gate 16 and body region 18 of transistor 14.

Notably, the illustrated/exemplary voltage levels to implement the write and read operations, with respect to the '188 Application are merely exemplary. The indicated voltage levels may be relative or absolute. Alternatively, the voltages indicated may be relative in that each voltage level, for example, may be increased or decreased by a given voltage amount (for example, each voltage may be increased or decreased by 0.25, 0.5, 1.0 and 2.0 volts) whether one or more of the voltages (for example, the source, drain or gate voltages) become or are positive and negative.

SUMMARY OF CERTAIN ASPECTS OF THE INVENTIONS

There are many inventions described and illustrated herein. The present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Moreover, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For the sake of brevity, many of those permutations and combinations will not be discussed separately herein.

In a first principle aspect, certain of the present inventions are directed to a method of manufacture of an integrated circuit device having a memory cell array including a plurality of memory cells, arranged in a matrix of rows and columns, wherein each memory cell includes at least one transistor having a gate, gate dielectric and first, second and body regions. The method of this aspect of the inventions comprises forming the gate and gate dielectric on or above a first semiconductor layer that is disposed on or above an insulating layer or region, removing a portion of the first semiconductor layer which is disposed laterally between the gates of the transistors of adjacent memory cells and forming the first regions of the transistors on the insulating layer or region by depositing a semiconductor material, wherein the first regions of the transistors of adjacent memory cells are common regions. The semiconductor material of this aspect of the inventions may be a different type and/or crystalline structure relative to the type and/or crystalline structure of the material comprising the first semiconductor layer. The method also includes, forming the second regions of the transistor, and depositing an electrical contact on an associated common first region.

In certain embodiments, forming the second regions of the transistor may further include forming the second regions of the transistors on the insulating layer or region by depositing the semiconductor material. In this embodiment, the second regions of the transistors of adjacent memory cells may be common regions.

In one embodiment, the semiconductor material of the first regions includes a material having a crystalline structure that is different from the crystalline structure of the material of the first semiconductor layer. In one embodiment, the semiconductor material of the first regions includes doped polycrystalline silicon and the first semiconductor layer is monocrystalline silicon. In another embodiment, the semiconductor material of the first regions includes at least one of silicon-germanium, gallium arsenide, silicon carbide, polycrystalline and amorphous silicon. Indeed, the first regions may be comprised of a plurality of semiconductor materials.

The first region of each transistor may further include a portion of the first semiconductor layer which is disposed adjacent to the associated body region of the transistor. Notably, removing a portion of the first semiconductor layer which is laterally disposed between the gates of the transistors of adjacent memory cells includes removing the portion of the first semiconductor layer to expose the insulating layer or region.

In another aspect, the present inventions are directed to an integrated circuit device comprising a memory cell array including a plurality of memory cells arranged in a matrix of rows and columns and disposed in or on a first semiconductor layer that is disposed on or above an insulating layer or region. Each memory cell includes at least one transistor having a gate, gate dielectric and first, second and body regions, wherein the gate and gate dielectric are disposed on or above the first semiconductor layer that is disposed on or above an insulating layer or region, the body region of each transistor is electrically floating, and the transistors of adjacent memory cells include a layout that provides a common first region. The first regions of the transistors are comprised of a semiconductor material which is different from the material of the first semiconductor layer. The integrated circuit further includes a plurality of electrical contacts, wherein an electrical contact is disposed on an associated common first region.

In certain embodiments of this aspect of the inventions, the transistors of adjacent memory cells include a layout that provides a common second region, wherein the second regions of the transistors are comprised of the semiconductor material which is different from the material comprising the first semiconductor layer.

In one embodiment, the semiconductor material of the first regions includes one or more crystalline structures that are different from the crystalline structure of the material of the first semiconductor layer. In another embodiment, the semiconductor material of the first regions includes doped polycrystalline silicon and the first semiconductor layer is monocrystalline silicon. In yet another embodiment, the semiconductor material of the first regions includes at least one of silicon-germanium, gallium arsenide, silicon carbide, polycrystalline silicon and amorphous silicon.

Notably, the first region of each transistor further includes a portion of the first semiconductor layer disposed adjacent to the associated body region of the transistor.

In certain embodiments, the body region of the transistor of each memory cell of the memory cell array is electrically floating. In these embodiments, each memory cell may be programmed to store one of a plurality of data states, each data state is representative of a charge in the body region of the associated transistor.

In another aspect, the present inventions are directed to an integrated circuit device comprising a memory cell array including a plurality of memory cells arranged in a matrix of rows and columns and disposed in or on a first semiconductor layer that is disposed on or above an insulating layer or region. Each memory cell includes at least one transistor having a gate, gate dielectric and first, second and body regions, wherein the gate and gate dielectric are disposed on or above the first semiconductor layer that is disposed on or above an insulating layer or region, the body region of each transistor is electrically floating, and the transistors of adjacent memory cells include a layout that provides a common first region. The first regions of the transistors, in this aspect of the present inventions, are comprised of a semiconductor material having a crystalline structure which is different from the crystalline structure of the material comprising the first semiconductor layer. The integrated circuit further includes a plurality of electrical contacts, wherein an electrical contact is disposed on an associated common first region.

In certain embodiments of this aspect of the inventions, the body region of the transistor of each memory cell of the memory cell array is electrically floating. In these embodiments, each memory cell may be programmed to store one of a plurality of data states, each data state is representative of a charge in the body region of the associated transistor.

Again, there are many inventions, and aspects of the inventions, described and illustrated herein. This Summary is not exhaustive of the scope of the present inventions. Indeed, this Summary may not be reflective of or correlate to the inventions protected by the claims in this or in continuation/divisional applications hereof.

Moreover, this Summary is not intended to be limiting of the inventions or the claims (whether the currently presented claims or claims of a divisional/continuation application) and should not be interpreted in that manner. While certain embodiments have been described and/or outlined in this Summary, it should be understood that the present inventions are not limited to such embodiments, description and/or outline, nor are the claims limited in such a manner (which should also not be interpreted as being limited by this Summary).

Indeed, many other aspects, inventions and embodiments, which may be different from and/or similar to, the aspects, inventions and embodiments presented in this Summary, will be apparent from the description, illustrations and claims, which follow. In addition, although various features, attributes and advantages have been described in this Summary and/or are apparent in light thereof, it should be understood that such features, attributes and advantages are not required whether in one, some or all of the embodiments of the present inventions and, indeed, need not be present in any of the embodiments of the present inventions.

BRIEF DESCRIPTION OF THE DRAWINGS

In the course of the detailed description to follow, reference will be made to the attached drawings. These drawings show different aspects of the present inventions and, where appropriate, reference numerals illustrating like structures, components, materials and/or elements in different figures are labeled similarly. It is understood that various combinations of the structures, components, materials and/or elements, other than those specifically shown, are contemplated and are within the scope of the present inventions.

Moreover, there are many inventions described and illustrated herein. The present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Moreover, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For the sake of brevity, many of those permutations and combinations will not be discussed and/or illustrated separately herein.

FIG. 1A is a schematic representation of a prior art DRAM array including a plurality of memory cells comprised of one electrically floating body transistor;

FIG. 1B is a three dimensional view of an exemplary prior art memory cell comprised of one electrically floating body transistor (PD-SOI NMOS);

FIG. 1C is a cross-sectional view of the prior art memory cell of FIG. 1B, cross-sectioned along line C-C′;

FIGS. 2A and 2B are exemplary schematic illustrations of the charge relationship, for a given data state, of the floating body, source and drain regions of a prior art memory cell comprised of one electrically floating body transistor (PD-SOI NMOS);

FIGS. 3A and 3B are exemplary schematic and general illustrations of conventional methods to program a memory cell to logic state “1” (i.e., generate or provide an excess of majority carrier in the electrically floating body of the transistor (an N-type channel transistor in this exemplary embodiment) of the memory cell of FIG. 1B; majority carriers in these exemplary embodiments are generated or provided by the channel electron impact ionization (FIG. 3A) and by GIDL or band to band tunneling (FIG. 3B));

FIGS. 4A-4C are exemplary schematics and general illustrations of conventional methods to program a memory cell to logic state “0” (i.e., provide relatively fewer majority carriers by removing majority carriers from the electrically floating body of the transistor of the memory cell of FIG. 1B; majority carriers may be removed through the drain region/terminal of the transistor (FIG. 4A), the source region/terminal of the transistor (FIG. 4B), and through both drain and source regions/terminals of the transistor by using, for example, the back gate pulses applied to the substrate/backside terminal of the transistor of the memory cell (FIG. 4C));

FIG. 5 illustrates an exemplary schematic (and control signal) of a conventional reading technique, the state of the memory cell may be determined by sensing the amount of the channel current provided/generated in response to the application of a predetermined voltage on the gate of the transistor of the memory cell;

FIG. 6 is a schematic representation of an equivalent electrically floating body memory cell (N-channel type) including an intrinsic bipolar transistor in addition to the MOS transistor;

FIG. 7 illustrates an exemplary schematic (and control signal voltage relationship) of an exemplary embodiment of an aspect of the '188 Application of programming a memory cell to logic state “1” by generating, storing and/or providing an excess of majority carriers in the electrically floating body of the transistor of the memory cell;

FIG. 8 illustrates an exemplary schematic (and control signals) of an exemplary embodiment of an aspect of the '188 Application of programming a memory cell to a logic state “0” by generating, storing and/or providing relatively fewer majority carriers (as compared to the number of majority carriers in the electrically floating body of the memory cell that is programmed to a logic state “1”) in the electrically floating body of the transistor of the memory cell, wherein the majority carriers are removed (write “0”) through both drain and source terminals by applying a control signal (for example, a programming pulse) to the gate of the transistor of the memory cell;

FIG. 9 illustrates an exemplary schematic (and control signals) of an exemplary embodiment of an aspect of the '188 Application of holding or maintaining the data state of a memory cell;

FIG. 10 illustrates an exemplary schematic (and control signals) of an exemplary embodiment of an aspect of the '188 Application of reading the data state of a memory cell by sensing the amount of the current provided/generated in response to an application of a predetermined voltage on the gate of the transistor of the memory cell;

FIG. 11 is a schematic representation of a memory cell array including a plurality of memory cells having one electrically floating body transistor wherein the memory cell array layout includes memory cells having shared source regions and shared drain regions wherein the transistor of a memory cell of a given or predetermined row of memory cells (i) shares a source region with a source region of an adjacent memory cell of first adjacent row of memory cells and (ii) shares a drain region with a drain region of an adjacent memory cell of second adjacent row of memory cells;

FIG. 12 is an exemplary plan view layout (not drawn to scale) of a portion of the memory cell array of FIG. 11 illustrating the common source and common drain transistor of the memory cell and memory cell array architecture, according to an exemplary embodiment of certain aspects of the present inventions;

FIG. 13 is a cross-sectional view (sectioned along dotted line A-A of FIG. 12) of a portion of memory cell array of FIGS. 11 and 12 illustrating an exemplary embodiment of the present inventions according to at least one aspect of the present inventions wherein the source and drain regions of the transistors of the memory cells comprise a polycrystalline material, for example, polycrystalline silicon;

FIGS. 14A-14H illustrate cross-sectional views (sectioned along dotted line A-A of FIG. 12) of the fabrication of the memory cell array of FIGS. 11, 12 and 13 at various stages of an exemplary process that provides the drain and source regions of the present inventions between adjacent memory cells, according to certain aspects of the present inventions;

FIGS. 15A-15C illustrate cross-sectional views (sectioned along dotted line A-A of FIG. 12) of another exemplary fabrication process of the memory cell array of FIGS. 11, 12 and 13 at various stages of an exemplary process that provides the drain and source regions of the present inventions between adjacent memory cells, according to certain aspects of the present inventions;

FIGS. 16A-16K illustrate cross-sectional views (sectioned along dotted line A-A of FIG. 12) of another exemplary fabrication process of the memory cell array of FIGS. 11, 12 and 13 at various stages of an exemplary process that provides the drain and source regions of the present inventions between adjacent memory cells, according to certain aspects of the present inventions;

FIGS. 17A and 17B illustrate cross-sectional views (sectioned along dotted line A-A of FIG. 12) of another exemplary fabrication process of the memory cell array of FIGS. 11, 12 and 13 at various stages of an exemplary process that provides the drain and source regions of the present inventions between adjacent memory cells, according to certain aspects of the present inventions;

FIGS. 18A-18C are schematic block diagram illustrations of an exemplary devices in which the layouts, architectures and/or processes may be implemented wherein FIG. 18A and 18C are logic devices (having logic circuitry and resident memory) and FIG. 18B is a memory device (having primarily of a memory array), according to certain aspects of the present inventions;

FIG. 19 is a cross-sectional view of a portion of memory cell array of FIGS. 11 and 12 illustrating an exemplary embodiment of the present invention in conjunction only with the shared drain region according to an aspect of the present inventions;

FIG. 20 is a cross-sectional view of a portion of memory cell array of FIGS. 11 and 12 illustrating an exemplary embodiment of the present invention in conjunction only with the shared source region according to an aspect of the present inventions;

FIG. 21 is a schematic representation of a memory cell array including a plurality of memory cells comprised of one electrically floating body transistor wherein the memory cell array includes separate source lines such that the source region of each memory cell of a given row of memory cells are separated from the source region of each memory cell of the adjacent row(s) of memory cells;

FIG. 22 is a schematic representation of a memory cell array including a plurality of memory cells comprised of one electrically floating body transistor wherein the memory cell array includes separate drain lines such that the drain region of each memory cell of a given row of memory cells are separated from the drain region of each memory cell of the adjacent row(s) of memory cells;

FIG. 23A-23C illustrate exemplary embodiments of a portion of a body region in conjunction with source or drain region, the substrate, and the insulation or non-conductive region; wherein the source or drain region includes a plurality of different materials and/or different crystalline structures; and

FIGS. 24A-24C illustrate exemplary embodiments of a portion of a source or drain region in conjunction with the contact and the insulation or non-conductive region; wherein the source or drain region includes a different material(s) and/or different crystalline structure(s) from the materials and/or crystalline structure(s) of the contact.

Again, there are many inventions described and illustrated herein. The present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For the sake of brevity, many of those combinations and permutations are not discussed separately herein.

DETAILED DESCRIPTION

There are many inventions described and illustrated herein. In one aspect, the present inventions are directed to a memory cell array having a plurality of memory cells, arranged in a matrix of rows and columns, wherein each memory cell of a given row of memory cells shares a source region and/or a drain region with an adjacent memory cell of an adjacent row of memory cells. In certain embodiments, the memory cell array includes memory cells having shared source regions and/or shared drain regions that include one or more different materials and/or one or more different crystalline structures relative to the material(s) and/or crystalline structure(s) of the body regions of the transistors of the memory cells.

The material and/or crystalline structure of the shared source regions and/or shared drain regions may include electrical characteristics that reduce, eliminate and/or minimize any disturbance and/or adverse impact on a given memory cell (for example, reduction in the read window), during performance of one or more memory operations (for example, a read and/or write operation(s)) on memory cells adjacent to such given memory cell. For example, such material and/or crystalline structure may facilitate and/or provide for sufficiently rapid recombination by reducing the life time or diffusion length of charge carriers (minority and/or majority) in the source and/or drain regions of the transistors of memory cells that share source regions and/or shared drain regions with transistors of adjacent memory cells.

In this regard, the present inventions (method and structure), in one aspect, may reduce the life time or diffusion length of minority carriers in source or drain regions. For example, when the dimension of the source and/or drain of the transistor are smaller or comparable to the diffusion length of minority carriers that enter the shared source and/or shared drain regions, such minority carriers may “penetrate” though the shared source and drain region and enter into electrically floating body region of the transistor of the adjacent cell. This penetration of carriers may disturb or impact the data state of the adjacent memory cell. As such, in one aspect, the present inventions are directed to reducing, eliminating and/or minimizing disturbance of the memory cells.

In another aspect, the present inventions are directed to methods of manufacturing such memory cell arrays. Notably, the memory cell array may comprise a portion of an integrated circuit device, for example, a logic device (such as, a microcontroller or microprocessor) or a portion of a memory device (such as, a discrete memory).

The present inventions may be implemented in conjunction with any memory cell technology, whether now known or later developed. For example, the memory cells may include one or more transistors having electrically floating body regions (for example, as described in detail in the Introduction), one transistor-one capacitor architectures, electrically floating gate transistors, junction field effect transistors (often referred to as JFETs), or any other memory/transistor technology whether now known or later developed. All such memory technologies are intended to fall within the scope of the present inventions.

Moreover, the present inventions may be implemented in conjunction with any type of memory (including discrete or integrated with logic devices), whether now known or later developed. For example, the memory may be a DRAM, SRAM and/or Flash. All such memories are intended to fall within the scope of the present inventions.

In one embodiment, the memory cells of the memory cell array may include at least one transistor having an electrically floating body transistor which stores an electrical charge in the electrically floating body region thereof. The amount of charge stored in the in the electrically floating body region correlates to the data state of the memory cell. One type of such memory cell is based on, among other things, a floating body effect of semiconductor on insulator (SOI) transistors. (See, for example, (1) Fazan et al., U.S. Pat. No. 6,969,662, (2) Okhonin et al., U.S. Patent Application Publication No. 2006/0131650 (“Bipolar Reading Technique for a Memory Cell Having an Electrically Floating Body Transistor”), (3) Okhonin et al., U.S. Patent Application Publication No. 2007/0058427 (“Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same”), (4) Okhonin, U.S. Patent Application Publication No. 2007/0138530 (“Electrically Floating Body Memory Cell and Array, and Method of Operating or Controlling Same”), and (5) Okhonin et al., U.S. Patent Application Publication No. 2007/0187775, (“Multi-Bit Memory Cell Having Electrically Floating Body Transistor, and Method of Programming and Reading Same”), all of which are incorporated by reference herein in its entirety). In this regard, the memory cell may consist of a partially depleted (PD) or a fully depleted (FD) SOI transistor or bulk transistor (transistor which formed in or on a bulk material/substrate) having a gate, which is disposed adjacent to the electrically floating body and separated therefrom by a gate dielectric. The body region of the transistor is electrically floating in view of the insulation or non-conductive region, for example, in bulk-type material/substrate, disposed beneath the body region. The state of memory cell may be determined by, for example, the concentration or amount of charge contained or stored in the body region of the SOI or bulk transistor.

With reference to FIGS. 11, 12, 13 and 14A and 14B, the discussion of an exemplary method of manufacturing a memory cell array, including a plurality of memory cells having electrically floating body transistors (as described above), may begin with forming cap/spacer structure 38 (for example, a silicon nitride and/or a silicon oxide material) disposed over gate 16 which is disposed on gate dielectric 16 a. The gate dielectric 16 a is disposed on semiconductor layer 25 (for example, silicon-germanium, gallium arsenide, silicon carbide and/or monocrystalline silicon). The cap/spacer structure 38, gate 16 and gate dielectric 16 a may be formed and/or provided using conventional and/or unconventional semiconductor processing techniques.

Notably, although gate 16 of transistors 14 is illustrated as including a plurality of materials (for example, a polycide or silicide material disposed on a polycrystalline silicon (also known or referred to as polysilicon)) gate 16 may be fabricated from one material (for example, a polysilicon); indeed any conventional or non-conventional structure, arrangement and/or material may be employed. Moreover, gate dielectric 16 a may include one (for example, a silicon oxide, silicon nitride or high dielectric constant material) or more than one material (for example, an oxide-nitride-oxide “sandwich” structure or a high dielectric constant composite material). All gate and gate dielectric structures, arrangements and/or materials, whether known or unknown (whether conventional or unconventional), are intended to fall within the scope of the present invention.

With reference to FIG. 14B, semiconductor layer 25 may then be selectively removed and/or etched using, for example, conventional and/or unconventional semiconductor processing techniques. The selectively removal and/or etch provides a void 40 and “islands” of material of semiconductor layer 25. In addition, in this embodiment, portions of semiconductor layer 25 are etched and/or removed to or substantially to insulation region or non-conductive region 24. Where selected portions of semiconductor layer 25 are removed entirely, voids 40 expose selected portions 42 of insulation region or non-conductive region 24 in the memory cell array.

In one embodiment, an anisotropic etch is employed to remove selected portions of semiconductor layer 25 using cap/spacer structure 38 as a mask. Moreover, the insulation region or non-conductive region 26 may provide an etch stop.

With reference to FIG. 14C, semiconductor material 46 a and 46 b may then deposited, grown and/or formed to provide and/or form source region 20 and drain region 22 of transistors 14 of memory cells 12 of the memory cell array. The semiconductor material 46 a and 46 b may be, for example, silicon-germanium, gallium arsenide, silicon carbide and/or silicon. The semiconductor material 46 a and 46 b may be deposited, grown and/or formed using conventional and/or unconventional semiconductor processing techniques. The semiconductor material 44 a and 44 b may be doped (for example, using dopant ions (p-type or n-type such as boron, phosphorus or arsenic may be introduced and/or implanted in semiconductor material 44 a and/or 44 b). In this way, the conductivity of source regions and drain regions 20 and 22, respectively, may be defined to be different from the conductivity of body region 18 disposed beneath gates 16.

Thereafter, or substantially concurrently with the deposition, growth and/or formation of source region 20 and drain region 22 of transistors 14 of memory cells 12, contacts 46 a are deposited, grown and/or formed on source regions 20 and contacts 46 b are deposited, grown and/or formed on drain regions 22. (See, FIG. 14D). The contacts 46 a and 46 b may include a conductive material (for example, a metal such as tungsten, titanium, titanium nitride, copper and/or aluminum) and/or a semiconductor material (for example, a silicon or silicon-germanium, whether doped or undoped).

Notably, with reference to FIG. 11, 12 and 14C, in this exemplary embodiment, transistor 14 a shares source region 20 with the transistor of an adjacent memory cell (see memory cell 12 aa in FIG. 11) of an adjacent row of memory cells (see row 36 aa in FIG. 11). In addition, transistor 14 a shares drain region 22 with transistor 14 b of adjacent memory cell 12 b.

Further, transistors 14 b and 14 c each also include a gate 16 and a gate dielectric 16 a disposed between gate 16 and a body region 18. The transistor 14 b, in addition to sharing drain region 22 with transistor 14 a, shares source region 20 with transistor 14 c of adjacent memory cell 12 c (which is a part of adjacent row 36 c). Moreover, transistor 14 c shares drain region 22 with transistor 14 d of adjacent memory cell 12 d which is a part of adjacent row 36 d (illustrated in FIG. 11).

After deposition, growth and/or formation of source regions 20 and drain regions 22 of transistors 14 of memory cells 12, an annealing process may be implemented to form a lightly doped region of the source/drain regions. The annealing process may be implemented before or after deposition, growth or formation of contacts 46 a and 46 b. As such, transistor 14 a includes gate 16 and gate dielectric 16 a, which is disposed between gate 16 and body region 18 of transistor 14. The body region may be formed from and/or in semiconductor layer 25 (for example, a monocrystalline material such as silicon) and (except for the lightly doped regions, if any) source and drain regions 20 and 22, respectively, are substantially formed in and/or from semiconductor material 44 a and 44 b.

With reference to FIGS. 14D-14H, in one embodiment, a material 48 may be deposited, grown and/or formed on contacts 46 a and 46 b to facilitate electrical connection of source and bit lines 30 and 32, respectively, to contacts 46 a and 46 b, respectively. Indeed, conductive material 54 may be employed as or form at least a portion of source and/or bit lines 30 and 32, respectively.

Thereafter, insulation material 50 may be deposited, grown and/or formed on contacts 46 a and 46 b (see, FIG. 14E) and via holes 50 formed to facilitate electrical connection to an associated bit line 32 (see, FIG. 14F). In this regard, with reference to FIG. 14G, a material 54 (for example, a metal such as copper, aluminum, chromium, gold, silver, molybdenum, platinum, palladium, tungsten and/or titanium), metal stacks, complex metals and/or complex metal stacks) and/or a semi-conductive material (for example, a silicon or silicon-germanium, whether doped or undoped) may then be deposited, grown and/or formed to provide bit line 32. Notably, although not illustrated or fabricated in this manner in the exemplary embodiments, (and/or source line 302 may be fabricated in the same or similar manner as bit line 32which is not illustrated in this manner in this cross-section (i.e., the source lines may be connected to associated source regions of transistors of associated memory cells by way of the same or similar material as described above with respect to bit lines 32). Moreover, as discussed below, material 54 may be eliminated before deposition, growth and/or formation of bit line 32 (and/or source line 30 in those embodiments where the source lines are connected to associated source regions of transistors of associated memory cells by way of the same or similar material and manner as described above with respect to bit lines 32).

Thereafter (for example, immediately or after additional circuitry and/or conductive layers are deposited, formed or grown), a passivation layer 56 may be deposited, formed or grown on the exposed surfaces of material 54 (or exposed portions of the bit line and/or source line, circuitry and/or conductive layers) to thereby protect and/or insulate the integrated circuit device. (See, FIG. 14H). The passivation layer 56 may include one or more (single or stacked) layers of insulating material including, for example, a silicon dioxide, a silicon nitride, and/or doped and undoped glass-like materials, such as a phosphosilicate (“PSG”) or a borophosphosilicate (“BPSG”)) and a spin on glass (“SOG”) (or combinations thereof). Notably, all materials and deposition, formation or growth techniques regarding passivation layer 56, whether now known or later developed, are intended to be within the scope of the present inventions.

Notably, additional processing may be employed to “protect” transistors and/or other elements (active and/or passive) in the periphery circuitry or logic portion of the integrated circuit. In this regard, a mask (soft or hard) or other protective layer may be disposed on or over such transistors and/or other elements (active and/or passive) in the periphery circuitry or logic portion of the integrated circuit during formation of source and drain regions 20 and 22, respectively.

In another embodiment, after semiconductor layer 25 is selectively removed and/or etched using, for example, conventional and/or unconventional semiconductor processing techniques (see FIGS. 14A and 14B), semiconductor material 44 a and 46 b may then deposited, grown and/or formed to provide and/or form source region 20 and drain region 22 of transistors 14 of memory cells 12 of the memory cell array. (See, FIG. 15A). Concurrently therewith, or thereafter (see, FIG. 15B), semiconductor material 44 a and 44 b may be doped (for example, using dopant ions (p-type or n-type such as boron, phosphorus or arsenic may be introduced and/or implanted in semiconductor material 44 a and/or 44 b). In this way, the conductivity of source regions and drain regions 20 and 22, respectively, may be defined to be different from the conductivity of body region 18 disposed beneath gates 16.

Thereafter, an annealing process (or other conventional process) may be employed to provide or form a lightly doped region of source regions 20 and drain regions 22. As such, transistor 14 a includes gate 16 and gate dielectric 16 a, which is disposed between gate 16 and body region 18 of transistor 14. The body region may be formed in and/or from semiconductor layer 25 (for example, silicon-germanium, gallium arsenide, silicon carbide and/or monocrystalline silicon), and source and drain regions 20 and 22, respectively, may be substantially formed in and/or from material 44 a and 44 b.

With reference to FIG. 15C, contacts 46 a and 46 b may be deposited, grown and/or formed on source regions 20 and drain regions 22 of transistors 14 of memory cells 12. (See, FIG. 15C). The contacts 46 a and 46 b may include a conductive material (for example, a metal such as tungsten, titanium, titanium nitride, copper and/or aluminum) and/or a semiconductor material (for example, a polycrystalline semiconductor (such as silicon), amorphous semiconductor (such as silicon) and/or silicon germanium. The semiconductor material may be may be doped or undoped. The memory cell array may be completed using the techniques described with respect to FIGS. 14D-14H. For the sake of brevity, such discussions will not be repeated.

As noted above, additional processing may be employed to “protect” transistors and/or other elements (active and/or passive) in the periphery circuitry or logic portion of the integrated circuit. In this regard, a mask (soft or hard) or other protective layer may be disposed on or over such transistors and/or other elements (active and/or passive) in the periphery circuitry or logic portion of the integrated circuit during formation of source and drain regions 20 and 22, respectively.

With reference to FIGS. 11, 12, 13 and 16A and 16B, in an other exemplary embodiment, the manufacture of a memory cell array, including a plurality of memory cells having electrically floating body transistors (as described above), may begin with ion implantation into semiconductor layer 25 (for example, silicon-germanium, gallium arsenide, silicon carbide or monocrystalline silicon) using conventional and/or unconventional semiconductor processing techniques. Thereafter, an annealing process provides or forms lightly doped region 20′ and 22′ of the source and drain regions, respectively, via annealing after ion implantation. In this exemplary method, dopant ions (p-type or n-type such as boron, phosphorus or arsenic) are implanted into semiconductor layer 25. Notably, in this embodiment, the dopant is introduced into semiconductor layer 25 using gate 16 and associated spacers to provide a self-aligned source/drain regions of the transistor.

With reference to FIGS. 16C and 16D, after formation of a lightly doped region of the source/drain regions, for example, via annealing after ion implantation), in this exemplary embodiment, a substantial portion of semiconductor layer 25 which is disposed between body regions of transistors 14 of adjacent memory cells 12 may then be etched and/or removed to form and/or provide voids 40. In one embodiment, portions of semiconductor layer 25 are etched and/or removed to or substantially to insulation region or non-conductive region 24. Where selected portions of semiconductor layer 25 are removed entirely, voids 40 expose selected portions 42 of insulation region or non-conductive region 24 in the memory cell array.

With reference to FIG. 16E, semiconductor material 44 a and 44 b may then deposited, grown and/or formed to provide and/or form source region 20 and drain region 22 of transistors 14 of memory cells 12 of the memory cell array. The semiconductor material 44 a and 44 b may be, for example, silicon-germanium, gallium arsenide, silicon carbide and/or silicon. The semiconductor material 44 a and 44 b may be deposited, grown and/or formed using conventional and/or unconventional semiconductor processing techniques. The semiconductor material 44 a and 44 b may be doped or undoped. For example, dopant ions (p-type or n-type such as boron, phosphorus or arsenic) may be introduced and/or implanted in semiconductor material 44 a and/or 44 b either during deposition or thereafter. As such, the conductivity of source regions and drain regions 20 and 22, respectively, may be defined to be different from the conductivity of body region 18 disposed beneath gates 16.

Immediately thereafter, or substantially concurrently with the deposition, growth and/or formation of source region 20 and drain region 22 of transistors 14 of memory cells 12, contacts 46 a are deposited, grown and/or formed on source regions 20 and contacts 46 b are deposited, grown and/or formed on drain regions 22. (See, FIG. 16F). The contacts 46 a and 46 b may include a conductive material (for example, a metal such as tungsten, titanium, titanium nitride, copper and/or aluminum) and/or a semiconductor material (for example, a silicon or silicon-germanium, whether doped or undoped).

With reference to FIGS. 16G-16K, in one embodiment, a material 48 may be deposited, grown and/or formed on contacts 46 a and 46 b to facilitate electrical connection of source and bit lines 30 and 32, respectively, to contacts 46 a and 46 b, respectively. Thereafter, insulation material 50 may be deposited, grown and/or formed on contacts 46 a and 46 b (see, FIG. 16H) and via holes 50 formed to facilitate electrical connection to an associated bit line 32 (see, FIG. 16I). In this regard, with reference to FIG. 16J, a material 54 (for example, a metal such as copper, aluminum, chromium, gold, silver, molybdenum, platinum, palladium, tungsten and/or titanium), metal stacks, complex metals and/or complex metal stacks) and/or a semi-conductive material (for example, a silicon or silicon-germanium, whether doped or undoped) may then be deposited, grown and/or formed to provide bit line 32 (and/or source line 32, not illustrated in this manner in this cross-section).

Thereafter, a passivation layer 56 may be deposited, formed or grown on the exposed surfaces of material 54 to protect and/or insulate integrated circuit device. (See, FIG. 16K). The passivation layer 56 may include one or more layers including, for example, polymers, a silicon dioxide and/or a silicon nitride. Indeed, passivation layer 56 may include a combination of silicon dioxide and a silicon nitride in a stack configuration; notably, all materials and deposition, formation or growth techniques, whether now known or later developed, are intended to be within the scope of the present inventions.

The passivation layer 56 may include one or more (single or stacked) layers of insulating material including, for example, a silicon dioxide, a silicon nitride, and/or doped and undoped glass-like materials, such as a PSG, a BPSG, and/or a SOG, (or combinations thereof. Indeed, all materials and deposition, formation or growth techniques regarding passivation layer 56, whether now known or later developed, are intended to be within the scope of the present inventions.

As mentioned above, additional processing may be employed to “protect” transistors and/or other elements (active and/or passive) in the periphery circuitry or logic portion of the integrated circuit. In this regard, a mask (soft or hard) or other protective layer may be disposed on or over such transistors and/or other elements (active and/or passive) in the periphery circuitry or logic portion of the integrated circuit during formation of source and drain regions 20 and 22, respectively.

In another embodiment, which may be characterized as a variant of the embodiment of FIGS. 16, after semiconductor layer 25 is selectively removed and/or etched using, for example, conventional and/or unconventional semiconductor processing techniques (see FIGS. 16A-16C and 17A), semiconductor material 44 a and 44 b may then deposited, grown and/or formed to provide and/or form source region 20 and drain region 22 of transistors 14 of memory cells 12 of the memory cell array. (See, FIG. 17B). Concurrently therewith, or thereafter, semiconductor material 44 a and 44 b may be doped (for example, using dopant ions (p-type or n-type such as boron, phosphorus or arsenic may be introduced and/or implanted in semiconductor material 44 a and/or 44 b).

Immediately thereafter, the material of contacts 46 a and 46 b may be deposited, grown and/or formed on source regions 20 and drain regions 22 of transistors 14 of memory cells 12. The contacts 46 a and 46 b may include a semiconductor material (for example, a polycrystalline semiconductor (such as silicon), silicon-germanium, and/or amorphous semiconductor (such as silicon)). The semiconductor material may be may be doped or undoped. Indeed, the material 44 may be the same as the material of contacts 46. Thus, in this embodiment, the formation of the source drain regions and the contacts are substantially concurrent albeit sequential.

Notably, the memory cell array may be completed using, for example, the techniques described with respect to FIGS. 16G-16K. For the sake of brevity, such discussions will not be repeated.

The source and/or drain regions of the present inventions may include a material, crystalline structure and/or electrical characteristics that reduce, eliminate and/or minimize any disturbance and/or adverse impact (for example, reduction of retention time and/or of the read window) on a given memory cell, during performance of one or more memory operations (for example, a read and/or write operation(s)) on memory cells adjacent to such given memory cell and which share source and/or drain regions. For example, such material may facilitate and/or provide for sufficiently rapid recombination of charge carriers (minority and/or majority) in the source and/or drain regions of the transistors of memory cells that share source regions and/or shared drain regions with transistors of adjacent memory cells. Thus, in one aspect, the material(s) of the common source regions and/or common drain regions provide a discontinuity (due to, for example, the different material(s) and/or different crystalline structure(s)) between or in the common source regions and/or common drain regions of the transistors of adjacent memory cells.

As noted above, the present inventions may be implemented in an integrated circuit device includes memory section (having a plurality of memory cells, for example, PD or FD SOI memory transistors) whether or not the integrated circuit includes a logic section (having, for example, high performance transistors, such as FinFET, multiple gate transistors, and/or non-high performance transistors (for example, single gate transistors that do not possess the performance characteristics of high performance transistors—not illustrated)) In this regard, the present inventions may be implemented in an integrated circuit device having a memory portion and a logic portion (see, for example, FIGS. 18A and 18C), or an integrated circuit device that is primarily a memory device (see, for example, FIG. 18B). The memory cell arrays may be comprised of N-channel, P-channel and/or both types of transistors. Indeed, circuitry that is peripheral to the memory array (for example, data sense circuitry (for example, sense amplifiers or comparators), memory cell selection and control circuitry (for example, word line and/or source line drivers), and/or the row and column address decoders) may include P-channel and/or N-channel type transistors.

There are many inventions described and illustrated herein. While certain embodiments, features, attributes and advantages of the inventions have been described and illustrated, it should be understood that many others, as well as different and/or similar embodiments, features, attributes and advantages of the present inventions, are apparent from the description and illustrations. As such, the embodiments, features, attributes and advantages of the inventions described and illustrated herein are not exhaustive and it should be understood that such other, similar, as well as different, embodiments, features, attributes and advantages of the present inventions are within the scope of the present inventions.

For example, as mentioned above, the present inventions may be employed in conjunction with any memory cell technology now known or later developed. For example, the present inventions may be implemented in conjunction with a memory array, having a plurality of memory cells each including an electrically floating body transistor. (See, for example, (1) U.S. Pat. No. 6,969,662, (2) Okhonin et al., U.S. Patent Application Publication No. 2006/0131650 (“Bipolar Reading Technique for a Memory Cell Having an Electrically Floating Body Transistor”), (3) Okhonin et al., U.S. Patent Application Publication No. 2007/0058427 (“Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same”), (4) Okhonin, U.S. Patent Application Publication No. 2007/0138530 (“Electrically Floating Body Memory Cell and Array, and Method of Operating or Controlling Same”), and (5) Okhonin et al., U.S. Patent Application Publication No. 2007/0187775 (“Multi-Bit Memory Cell Having Electrically Floating Body Transistor, and Method of Programming and Reading Same”). In this regard, the memory cell may consist of a PD or a FD SOI transistor (or transistor formed on or in bulk material/substrate) having a gate, which is disposed adjacent to the electrically floating body and separated therefrom by a gate dielectric. The body region of the transistor is electrically floating in view of the insulation or non-conductive region (for example, in bulk-type material/substrate) disposed beneath the body region. The state of memory cell is determined by the concentration of charge within the body region of the SOI transistor.

The memory cells of the memory cell array may be comprised of N-channel, P-channel and/or both types of transistors. Indeed, circuitry that is peripheral to the memory array (for example, sense amplifiers or comparators, row and column address decoders, as well as line drivers (not illustrated in detail herein)) may include P-channel and/or N-channel type transistors. Moreover, the present inventions may be implemented in conjunction with any memory cell array configuration and/or arrangement of the memory cell array.

Moreover, the present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Moreover, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For example, the present inventions may employ the techniques for common drain regions (see, FIG. 19) or for common source regions (see, FIG. 20) or for both the common drain regions and common source regions (see, for example, FIG. 13). Indeed, the present inventions may be implemented in memory cell array architectures that do not include both common drain regions (see, FIG. 21) and/or common source regions (see, FIG. 22). For the sake of brevity, many of those permutations and combinations are not discussed separately herein.

Further, source and/or drain regions may include more than one material and/or material(s) having one or more crystalline structures. For example, in one exemplary embodiment, source and/or drain regions are formed via successive depositions of different materials and/or materials having different crystalline structures (See, for example, FIGS. 23A and 23B). In one exemplary embodiment, material 44 may have a first crystalline structure (for example, amorphous) and material 44′ may have a second crystalline structure (for example, polycrystalline). In this embodiment, materials 44 and 44′ may be the same material (for example, silicon) or different materials.

Notably, in the exemplary embodiments of FIGS. 23A and 23B, the materials 44, 44′ and/or 44″ of source and/or drain regions 20/22 may, in combination, include electrical characteristics that reduce, eliminate and/or minimize any disturbance and/or adverse impact on a given memory cell (for example, reduction in the read window), during performance of one or more memory operations (for example, a read and/or write operation(s)) on memory cells adjacent to such given memory cell. For example, such material may facilitate and/or provide for sufficiently rapid recombination of charge carriers (minority and/or majority) in the source and/or drain regions of the transistors of memory cells that share source regions and/or shared drain regions with transistors of adjacent memory cells. The embodiments of FIGS. 23A and 23B may be employed in conjunction with any of the embodiment described and/or illustrated herein. For the sake of brevity, such discussions will not be repeated.

In addition, as noted above, the material(s) and/or crystalline structure(s) of source and/or drain regions 20/22 may be the same as or different from the material(s) and/or crystalline structure(s) of contacts 46. (See, for example, FIGS. 24A-24C). For example, material 44 of source and/or drain regions 20/22 may comprise a doped polycrystalline silicon and the material of contacts 46 may be polycrystalline silicon having a different doping concentration (for example less lightly doped or undoped). Alternatively, material 44 of source and/or drain regions 20/22 may comprise a doped amorphous silicon and the material of contacts 46 may be a doped polycrystalline silicon (having the same or a different doping concentration).

Notably, with reference to FIG. 14B, portions of insulation region or non-conductive region 24 may also be removed and/or etched during formation of voids 40 (i.e., “overetched”). Under these circumstances, material 44 would extend into the “plane” of the insulation region or non-conductive region 24.

As such, the above embodiments of the present inventions are merely exemplary embodiments. They are not intended to be exhaustive or to limit the inventions to the precise forms, techniques, materials and/or configurations disclosed. Many modifications and variations are possible in light of the above teaching. It is to be understood that other embodiments may be utilized and operational changes may be made without departing from the scope of the present inventions. As such, the foregoing description of the exemplary embodiments of the inventions has been presented for the purposes of illustration and description. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the inventions not be limited solely to the description above.

Further, although exemplary embodiments and/or processes have been described above according to a particular order, that order should not be interpreted as limiting but is merely exemplary. Moreover, implementing and/or including certain processes and/or materials may be unnecessary and/or may be omitted. For example, material 48 may be eliminated before deposition, growth and/or formation of bit line 32 and/or source line 30 (i.e., in those embodiments where the source lines are connected to associated source regions of transistors of associated memory cells by way of the same or similar material and manner as described above with respect to bit lines 32).

Notably, electrically floating body transistor 14 of memory cell 12 may be a symmetrical or non-symmetrical device. Where transistor 14 is symmetrical, the source and drain regions are essentially interchangeable. However, where transistor 14 is a non-symmetrical device, the source or drain regions of transistor 14 have different electrical, physical, doping concentration and/or doping profile characteristics. As such, the source or drain regions of a non-symmetrical device are typically not interchangeable. This notwithstanding, the drain region of the electrically floating N-channel transistor of the memory cell (whether the source and drain regions are interchangeable or not) is that region of the transistor that is connected to the bit line which is coupled to data sense circuitry (for example, a sense amplifier and/or an analog-to-digital converter).

The term “depositing” and other forms thereof (i.e., deposit, deposition and/or deposited) in the claims, means, among other things, depositing, creating, forming and/or growing a material (for example, a layer of material). Further, in the claims, the term “etching” and other forms thereof (i.e., etch and/or etched) in the claims, means, among other things, etching, removing and/or patterning a material (for example, all or a portion of a layer of material). In addition, the term “forming” and other forms thereof (i.e., form, formation and/or formed) in the claims means, among other things, fabricating, creating, depositing, implanting, manufacturing and/or growing a region (for example, in a material or a layer of a material). 

1. A method of manufacture of an integrated circuit device having a memory cell array including a plurality of memory cells, arranged in a matrix of rows and columns, wherein each memory cell includes at least one transistor having a gate, a gate dielectric, and first, second, and body regions, the method comprising: forming the gate and gate dielectric on or over a first semiconductor layer that is disposed on or over an insulating layer or region; forming a cap structure on top and side surfaces of the gate, the gate dielectric, and at least a portion of the first semiconductor layer, wherein the cap structure has a first lateral boundary; removing a portion of the first semiconductor layer between transistors of adjacent memory cells coinciding with at least a portion of the first lateral boundary of the cap structure such that at least one remaining portion of the first semiconductor layer has a second lateral boundary that extends beyond at least one lateral boundary of the gate and gate dielectric and coincides with at least a portion of the first lateral boundary of the cap structure, wherein the body region is formed in the at least one remaining portion of the first semiconductor layer; forming at least a portion of the first region by disposing a semiconductor material on the insulating layer or region where the portion of the first semiconductor layer was removed, wherein the semiconductor material extends continuously between transistors of adjacent memory cells such that first regions of transistors of adjacent memory cells form a common first region, and wherein the semiconductor material is a different type and/or crystalline structure relative to a type and/or crystalline structure of material comprising the first semiconductor layer; forming at least a portion of the second region; and forming an electrical contact on an associated common first region.
 2. The method of manufacture of claim 1 wherein forming at least a portion of the second region further includes disposing the semiconductor material on the insulating layer or region where another portion of the first semiconductor layer was removed between transistors of adjacent memory cells.
 3. The method of manufacture of claim 2 wherein second regions of transistors of adjacent memory cells form a common second region.
 4. The method of manufacture of claim 2 wherein the second region of each transistor further includes a portion of the first semiconductor layer which is disposed adjacent to the associated body region of the transistor.
 5. The method of manufacture of claim 1 wherein the semiconductor material of the first regions include a material having a crystalline structure that is different from the crystalline structure of the material of the first semiconductor layer.
 6. The method of manufacture of claim 1 wherein the first region of each transistor further includes a portion of the first semiconductor layer which is disposed adjacent to the associated body region of the transistor.
 7. The method of manufacture of claim 1 wherein the semiconductor material of the first regions includes doped polycrystalline silicon and the first semiconductor layer is monocrystalline silicon.
 8. The method of manufacture of claim 1 wherein the first regions are comprised of a plurality of semiconductor materials.
 9. The method of manufacture of claim 1 wherein removing a portion of the first semiconductor layer between transistors of adjacent memory cells includes removing the portion of the first semiconductor layer to expose the insulating layer or region.
 10. The method of manufacture of claim 1 wherein the first semiconductor layer is silicon and the semiconductor material of the first regions includes at least one of silicon-germanium, gallium arsenide, silicon carbide, polycrystalline silicon, and amorphous silicon.
 11. The method of manufacture of claim 1 wherein forming the gate and gate dielectric on or over a first semiconductor layer includes forming the gate and gate dielectric above the first semiconductor layer that is disposed on or over the insulating layer or region.
 12. The method of manufacture of claim 1 wherein forming the gate and gate dielectric on or over a first semiconductor layer that is disposed on or over the insulating layer or region includes forming the gate and gate dielectric on or over the first semiconductor layer that is disposed above the insulating layer or region.
 13. The method of manufacture of claim 1 wherein forming the gate and gate dielectric on or over a first semiconductor layer that is disposed on or over the insulating layer or region includes forming the gate and gate dielectric above the first semiconductor layer that is disposed above the insulating layer or region. 